Discrete Semiconductor Products

NXH35C120L2C2ESG

Obsolete

IGBT MODULE, CIB 1200 V, 35 A IG

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Discrete Semiconductor Products

Obsolete

IGBT MODULE, CIB 1200 V, 35 A IG

Technical Specifications

Parameters and characteristics for this part

Specification	NXH35C120L2C2ESG

Configuration	Brake, Three Phase Inverter
Current - Collector (Ic) (Max) [Max]	35 A
Current - Collector Cutoff (Max) [Max]	250 µA
Input	Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce	8.333 nF
Mounting Type	Through Hole
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	26-PowerDIP Module
Package / Case [custom]	1.199 in
Package / Case [custom]	47.2 mm
Power - Max [Max]	20 mW
Supplier Device Package	26-DIP
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Power - Max [Max]	Package / Case [custom]	Package / Case [custom]	Package / Case	Input	NTC Thermistor	Configuration	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
ON Semiconductor NXH35C120L2C2ESG	20 mW	1.199 in	47.2 mm	26-PowerDIP Module	Three Phase Bridge Rectifier		Brake Three Phase Inverter	1200 V	8.333 nF	Through Hole	250 µA	35 A	2.4 V	150 °C	-40 °C	26-DIP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Three Phase Inverter with Brake 1200 V 35 A 20 mW Through Hole 26-DIP

Technical documentation and resources

No documents available