Discrete Semiconductor Products

RCD080N25TL

LTB

MOSFET N-CH 250V 8A CPT3

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Discrete Semiconductor Products

LTB

MOSFET N-CH 250V 8A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RCD080N25TL

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1440 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Power Dissipation (Max)	850 mW
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	FET Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)
Rohm Semiconductor RCD080N25TL	Surface Mount	N-Channel	MOSFET (Metal Oxide)	CPT3	8 A	150 °C	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 W	850 mW	25 nC	250 V	1440 pF	300 mOhm	5 V	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.46

General part information

N-Channel 250 V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3

Technical documentation and resources

No documents available