Discrete Semiconductor Products

RCD080N25TL

LTB

MOSFET N-CH 250V 8A CPT3

Search across all available documentation for this part.

Discrete Semiconductor Products

LTB

MOSFET N-CH 250V 8A CPT3

Technical Specifications

Parameters and characteristics for this part

Specification	RCD080N25TL

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1440 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	850 mW, 20 W
Rds On (Max) @ Id, Vgs	300 mOhm
Supplier Device Package	CPT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	FET Type	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor RCD080N25TL	25 nC	250 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	Surface Mount	8 A	150 °C	CPT3	20 W 850 mW	10 V	30 V	300 mOhm	1440 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 250 V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3

Technical documentation and resources

No documents available