Discrete Semiconductor Products

SI3127DV-T1-GE3

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MOSFET P-CH 60V 3.5A/13A 6TSOP

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Discrete Semiconductor Products

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MOSFET P-CH 60V 3.5A/13A 6TSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI3127DV-T1-GE3

Current - Continuous Drain (Id) @ 25°C	13 A, 3.5 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	833 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	2 W, 4.2 W
Rds On (Max) @ Id, Vgs	89 mOhm
Supplier Device Package	6-TSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Power Dissipation (Max)	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI3127DV-T1-GE3	3.5 A 13 A	MOSFET (Metal Oxide)	Surface Mount	2 W 4.2 W	P-Channel	6-TSOP	30 nC	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	20 V	60 V	4.5 V 10 V	3 V	89 mOhm	833 pF

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General part information

P-Channel 60 V 3.5A (Ta), 13A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

Technical documentation and resources