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LMH9135RRLEVM
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LMH9135RRLEVM

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Texas Instruments

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LMH9135RRLEVM
Development Boards, Kits, Programmers

LMH9135RRLEVM

Active
Texas Instruments

EVAL BOARD FOR LMH9135

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Technical Specifications

Parameters and characteristics for this part

SpecificationLMH9135RRLEVM
For Use With/Related ProductsLMH9135
Frequency3.55 GHz
Supplied ContentsBoard(s)
TypeAmplifier

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBox 1$ 118.80

Description

General part information

LMH9135 Series

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Operating on a single 3.3 V supply, the device consumes about 395 mW typical active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8-V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

LMH9135 are high-performance, single-channel, differential input to single-ended output transmit radio frequency (RF) gain block amplifiers that support 3.2 – 4.2 GHz frequency band. The device can support the requirements for next generation 5G active antenna systems (AAS) or small-cell applications while driving the input of a power amplifier (PA). The RF amplifier provides 18 dB typical gain with good linearity performance of +31.5 dBm Output IP3, while maintaining less than 4 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 100-Ω differential input impedance providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE) at the input. Also, the device is internally matched for 50-Ω single-ended output impedance that is required to easily interface with a post-amplifier, surface acoustic wave (SAW) filter, or power amplifier (PA).

Documents

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