Specification	BUK9K20-80EX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	80 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	3462 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1205, 8-LFPAK56
Power - Max [Max]	68 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

BUK9K20-80E Series

Dual N-channel 80 V, 20 mΩ logic level MOSFET

Part	Grade	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Feature	Package / Case	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Qualification	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)
Nexperia USA Inc. BUK9K20-80EX	Automotive	25.5 nC	Surface Mount	Logic Level Gate	8-LFPAK56 SOT-1205	2 N-Channel (Dual)	175 °C	-55 °C	23 A	3462 pF	MOSFET (Metal Oxide)	68 W	17 mOhm	AEC-Q101	2.1 V	LFPAK56D	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2800	$ 2.85
Mouser	N/A	1	$ 1.73
		10	$ 1.31
		100	$ 1.03
		500	$ 0.82
		1000	$ 0.68
		1500	$ 0.68
		3000	$ 0.68

Description

General part information

BUK9K20-80E Series

Dual Logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.