
Discrete Semiconductor Products
BZT52C39-G RHG
ActiveTaiwan Semiconductor Corporation
ZENER DIODES 350MW, 5%, SMALL SIGNAL ZENER DIODE
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DocumentsBZT52C39-G RHG | Datasheet

Discrete Semiconductor Products
BZT52C39-G RHG
ActiveTaiwan Semiconductor Corporation
ZENER DIODES 350MW, 5%, SMALL SIGNAL ZENER DIODE
Deep-Dive with AI
DocumentsBZT52C39-G RHG | Datasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | BZT52C39-G RHG |
|---|---|
| Current - Reverse Leakage @ Vr | 100 nA |
| Impedance (Max) (Zzt) [Max] | 130 Ohms |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOD-123 |
| Power - Max [Max] | 350 mW |
| Supplier Device Package | SOD-123 |
| Tolerance | 5 % |
| Voltage - Forward (Vf) (Max) @ If [Max] | 0.9 V |
| Voltage - Zener (Nom) (Vz) | 39 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BZT52C-G Series
ZENER DIODES 350MW, 5%, SMALL SIGNAL ZENER DIODE
Documents
Technical documentation and resources