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Technical Specifications
Parameters and characteristics for this part
| Specification | RSJ151P10TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 50 W |
| Power Dissipation (Max) | 1.35 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | LPTS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RSJ151P10 Series
Pch 100V 15A Power MOSFET
Documents
Technical documentation and resources