Discrete Semiconductor Products

UMF4NTR

NRND

TRANS NPN PREBIAS/PNP 0.15W UMT6

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Discrete Semiconductor Products

NRND

TRANS NPN PREBIAS/PNP 0.15W UMT6

Technical Specifications

Parameters and characteristics for this part

Specification	UMF4NTR

Current - Collector (Ic) (Max)	100 mA, 500 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	270, 20
Frequency - Transition [Max]	260 MHz
Frequency - Transition [Min]	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-363, SC-88, 6-TSSOP
Resistor - Base (R1)	2.2 kOhm
Resistor - Emitter Base (R2)	2.2 kOhms
Supplier Device Package	UMT6
Transistor Type	1 PNP, 1 NPN Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV, 300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	12 V

Part	Resistor - Emitter Base (R2)	Transistor Type	Resistor - Base (R1)	Package / Case	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max) [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Frequency - Transition [Max]	Frequency - Transition [Min]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor UMF4NTR	2.2 kOhms	1 NPN Pre-Biased 1 PNP	2.2 kOhm	6-TSSOP SC-88 SOT-363	Surface Mount	250 mV 300 mV	100 mA 500 mA	12 V	50 V	20 270	260 MHz	250 MHz	UMT6	500 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 12V 100mA, 500mA 250MHz, 260MHz 150mW Surface Mount UMT6

Technical documentation and resources