Discrete Semiconductor Products

VS-2EFU06-M3/I

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DIODE GEN PURP 600V 2A DO219AB

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Discrete Semiconductor Products

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DIODE GEN PURP 600V 2A DO219AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-2EFU06-M3/I

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	3 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	100 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	55 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-219AB (SMF)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.35 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-2EFU06-M3/I	100 °C	-55 °C	1.35 V	Standard	DO-219AB	600 V	3 µA	200 mA 500 ns	DO-219AB (SMF)	55 ns	Surface Mount	2 A

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General part information

Diode 600 V 2A Surface Mount DO-219AB (SMF)

Technical documentation and resources