Discrete Semiconductor Products

SI6433BDQ-T1-GE3

Obsolete

MOSFET P-CH 12V 4A 8TSSOP

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 4A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6433BDQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	15 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Power Dissipation (Max)	1.05 W
Rds On (Max)	40 mOhm, 40 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.5 V

Part	FET Type	Vgs (Max)	Package Name	Gate Charge (Max)	Package Length	Package Width	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Mounting Type	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SI6433BDQ-T1-E3	P-Channel	8 V	8-TSSOP	15 nC	0.173 in	4.4 mm	1.5 V	4 A	12 V	1.05 W	MOSFET (Metal Oxide)	2.5 V	4.5 V	Surface Mount	40 mOhm 40 mOhm	-55 °C	150 °C
Vishay Dale SI6433BDQ-T1-GE3	P-Channel	8 V	8-TSSOP	15 nC	0.173 in	4.4 mm	1.5 V	4 A	12 V	1.05 W	MOSFET (Metal Oxide)	2.5 V	4.5 V	Surface Mount	40 mOhm 40 mOhm	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	30d+

3D models and CAD resources for this part

General part information

P-Channel 12 V 4A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available