Discrete Semiconductor Products

BUZ32H3045AATMA1

Obsolete

MOSFET N-CH 200V 9.5A TO263-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 9.5A TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	BUZ32H3045AATMA1

Current - Continuous Drain (Id) @ 25°C	9.5 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	530 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	75 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-TO263-3-2
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type
INFINEON BUZ32H3045AATMA1	75 W	400 mOhm	MOSFET (Metal Oxide)	PG-TO263-3-2	10 V	200 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	9.5 A	150 °C	-55 °C	530 pF	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 200 V 9.5A (Tc) 75W (Tc) Surface Mount PG-TO263-3-2

Technical documentation and resources