Specification	PSMN8R5-40HSX

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	21.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1439 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1205, 8-LFPAK56
Power - Max [Max]	53 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)

PSMN8R5-40HS Series

N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Part	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Nexperia USA Inc. PSMN8R5-40HSX	MOSFET (Metal Oxide)	8-LFPAK56 SOT-1205	1439 pF	Surface Mount	2 N-Channel (Dual)	175 °C	-55 °C	40 V	53 W	8.5 mOhm	LFPAK56D	21.8 nC	30 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	90	$ 2.65

General part information

Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology.

Technical documentation and resources