Discrete Semiconductor Products

IDW15S120FKSA1

Obsolete

DIODE SIL CARB 1.2KV 15A TO247-3

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Discrete Semiconductor Products

Obsolete

DIODE SIL CARB 1.2KV 15A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDW15S120FKSA1

Capacitance @ Vr, F	870 pF
Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	305 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	PG-TO247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	15 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
INFINEON IDW15S120FKSA1	PG-TO247-3	TO-247-3	15 A	870 pF	500 mA	Through Hole	0 ns	305 µA	175 ░C	-55 °C	1.8 V	15 A	SiC (Silicon Carbide) Schottky	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 15A Through Hole PG-TO247-3

Technical documentation and resources

No documents available