Discrete Semiconductor Products

SUM25P10-138-E3

Obsolete

MOSFET N-CH 100V 16.7A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 16.7A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM25P10-138-E3

Current - Continuous Drain (Id) (Tc)	16.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	2110 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	3.75 W, 88.2 W
Rds On (Max)	13.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Mounting Type	Vgs (Max)	Vgs(th) (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package Name
Vishay Dale SUM25P10-138-E3	13.8 mOhm	2110 pF	60 nC	Surface Mount	20 V	4 V	N-Channel	-55 °C	175 °C	3.75 W 88.2 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	6 V	10 V	MOSFET (Metal Oxide)	16.7 A	100 V	TO-263 (D2PAK)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 100 V 16.7A (Tc) 3.75W (Ta), 88.2W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources