
PSMN2R8-25MLC,115
ActiveMOSFETS N-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
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PSMN2R8-25MLC,115
ActiveMOSFETS N-CHANNEL 40 V, 2.8 MOHM, 160 A STANDARD LEVEL MOSFET IN LFPAK56 USING OPTIMIZEDNEXTPOWERS3 SCHOTTKY-PLUS TECHNOLOGY
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R8-25MLC,115 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2432 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 88 W |
| Rds On (Max) @ Id, Vgs | 2.8 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PSMN2R8-25MLC Series
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Documents
Technical documentation and resources