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Technical Specifications

Parameters and characteristics for this part

SpecificationPMPB07R3ENX
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]914 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.9 W, 12.5 W
Supplier Device PackageDFN2020M-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.51
10$ 0.44
100$ 0.30
500$ 0.24
1000$ 0.19
Digi-Reel® 1$ 0.51
10$ 0.44
100$ 0.30
500$ 0.24
1000$ 0.19
N/A 6476$ 1.05
Tape & Reel (TR) 3000$ 0.17
6000$ 0.16
9000$ 0.15
30000$ 0.15

Description

General part information

PMPB07R3EN Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.