Discrete Semiconductor Products

SIHLZ34S-GE3

LTB

MOSFET N-CH 60V 30A D2PAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 60V 30A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHLZ34S-GE3

Current - Continuous Drain (Id) (Tc)	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	35 nC, 35 nC
Input Capacitance (Ciss) (Max)	1600 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	3.7 W, 88 W
Rds On (Max)	50 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2 V

Part	Vgs(th) (Max)	Vgs (Max)	FET Type	Mounting Type	Package / Case	Rds On (Max)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Package Name	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIHLZ34S-GE3	2 V	10 V	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	50 mOhm	3.7 W 88 W	MOSFET (Metal Oxide)	60 V	35 nC 35 nC	TO-263 (D2PAK)	1600 pF	5 V	4 V	-55 °C	175 °C	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.63	1m+
	Tape & Reel (TR)	1000	$ 0.62	1m+
		2000	$ 0.58
		5000	$ 0.55
		10000	$ 0.53

3D models and CAD resources for this part

General part information

N-Channel 60 V 30A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources