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MDD310-08N1
Discrete Semiconductor Products

MDD310-08N1

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LITTELFUSE

DIODE MODULE GP 800V 305A Y2-DCB

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MDD310-08N1
Discrete Semiconductor Products

MDD310-08N1

Active
LITTELFUSE

DIODE MODULE GP 800V 305A Y2-DCB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMDD310-08N1
Current - Average Rectified (Io) (per Diode)305 A
Current - Reverse Leakage @ Vr40 mA
Diode Configuration1 Pair Series Connection
Mounting TypeChassis Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-40 °C
Package / CaseY2-DCB
Speed [Min]200 mA, 500 ns
Supplier Device PackageY2-DCB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

Description

General part information

MDD310 Series

Bipolar Module - Diode Y2-DCB

Documents

Technical documentation and resources