Discrete Semiconductor Products

PSMN6R4-30MLDX

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N-CHANNEL 30 V, 6.4 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

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DocumentsPlastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch; 2.7 mm x 3.4 mm x 0.9 mm body LFPAK MOSFET thermal design guide +14

Discrete Semiconductor Products

PSMN6R4-30MLDX

Active

Nexperia USA Inc.

N-CHANNEL 30 V, 6.4 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING NEXTPOWERS3 TECHNOLOGY

Deep-Dive with AI

DocumentsPlastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch; 2.7 mm x 3.4 mm x 0.9 mm body LFPAK MOSFET thermal design guide +14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN6R4-30MLDX

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	832 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	51 W
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.2 V

PSMN6R4-30MLD Series

N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology
Nexperia USA Inc. PSMN6R4-30MLDX	20 V	6.3 mOhm	Surface Mount	832 pF	30 V	N-Channel	4.5 V 10 V	LFPAK33	2.2 V	66 A	175 °C	-55 °C	13.7 nC	51 W	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1440	$ 1.17

Description

General part information

PSMN6R4-30MLD Series

Logic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. The NextPowerS3 portfolio, utilising Nexperia’s unique "SchottkyPlus" technology, delivers high efficiency and the low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like body diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.