Discrete Semiconductor Products

RJK0366DPA-02#J0B

Obsolete

MOSFET N-CH 30V 25A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 25A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0366DPA-02#J0B

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1010 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	FET Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case
Renesas Electronics Corporation RJK0366DPA-02#J0B	1010 pF	Surface Mount	MOSFET (Metal Oxide)	6.8 nC	150 °C	N-Channel	8-WPAK	25 A	10 mOhm	30 V	8-WFDFN Exposed Pad
Renesas Electronics Corporation RJK0366DPA-00#J0	1010 pF	Surface Mount	MOSFET (Metal Oxide)	6.8 nC	150 °C	N-Channel	8-WPAK (3)	25 A	11.1 mOhm	30 V	8-PowerWDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	325	$ 0.92

General part information

The RJK0366DPA is a N Channel Power MOSFET.

Technical documentation and resources