Specification	94-3250

Current - Continuous Drain (Id) @ 25°C	49 A, 12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	7 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	26 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MQ
Power Dissipation (Max)	2.3 W, 42 W
Rds On (Max) @ Id, Vgs	11.5 mOhm
Supplier Device Package	DIRECTFET™ MQ
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2.1 V

IRF6604 Series

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Vgs (Max)	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON 94-3250	26 nC	11.5 mOhm	30 V	MOSFET (Metal Oxide)	12 A 49 A	N-Channel	Surface Mount	12 V	DirectFET™ Isometric MQ	2.3 W 42 W	7 V	4.5 V	-40 °C	150 °C	DIRECTFET™ MQ	2.1 V	2270 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.08

General part information

N-Channel 30 V 12A (Ta), 49A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MQ

Technical documentation and resources