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SOT23
Discrete Semiconductor Products

PBSS8110T-QR

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT TRANSISTOR

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Documentsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm bodyReflow soldering profile+8
SOT23
Discrete Semiconductor Products

PBSS8110T-QR

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 1 A NPN LOW VCESAT TRANSISTOR

Deep-Dive with AI

Documentsplastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm bodyReflow soldering profile+8

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS8110T-QR
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150 hFE
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
QualificationAEC-Q101
Supplier Device PackageTO-236AB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.62
Tape & Reel (TR) 3000$ 0.09
6000$ 0.09
9000$ 0.08
30000$ 0.08
75000$ 0.07
MouserN/A 1$ 0.36
10$ 0.28
100$ 0.19
500$ 0.14
1000$ 0.11
3000$ 0.11
6000$ 0.10
9000$ 0.09
24000$ 0.08

Description

General part information

PBSS8110T-Q Series

NPN low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.