ADRF5300BCCZN
ActiveRF SWITCH, SILICON, SPDT, 24 TO 32 GHZ, 3.15 V TO 3.45 V SUPPLY, -40 TO 105 °C, LGA-EP-20
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ADRF5300BCCZN
ActiveRF SWITCH, SILICON, SPDT, 24 TO 32 GHZ, 3.15 V TO 3.45 V SUPPLY, -40 TO 105 °C, LGA-EP-20
Technical Specifications
Parameters and characteristics for this part
| Specification | ADRF5300BCCZN |
|---|---|
| Circuit | SPDT |
| Frequency Range (Max) | 32 GHz |
| Frequency Range (Min) | 24 GHz |
| IIP3 | 65 dBm |
| Impedance | 50 Ohm |
| Insertion Loss | 1.1 dB |
| Isolation | 38 dB |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 105 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 20-VFLGA Exposed Pad |
| Package Length | 3 mm |
| Package Name | 20-LGA |
| Package Width | 3 mm |
| RF Type | General Purpose |
| Test Frequency | 32 GHz |
| Voltage - Supply (Maximum) | 3.45 V |
| Voltage - Supply (Minimum) | 3.15 V |
Pricing
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Description
General part information
ADRF5300 Series
The ADRF5300 is a reflective, SPDT switch manufactured in the silicon process.The ADRF5300 is developed for 5G applications ranging from 24 GHz to 32 GHz. The ADRF5300 has a low insertion loss of 1.1 dB, a high isolation of 38 dB, and an RF input power handling capability of 28 dBm average and 36 dBm peak.The ADRF5300 incorporates a negative voltage generator (NVG) to operate with a single positive supply of 3.3 V (VDD) applied to the VDDpin. The device employs CMOS- and low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5300 is packaged in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.APPLICATIONSIndustrial scannerTest instrumentationCellular infrastructure: 5G millimeter waveMilitary radios, radars, electronic counter measures (ECMs)Microwave radios and very small aperture terminals (VSATs)