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IRF7809AVTRPBF
Discrete Semiconductor Products

IRF7809AVTRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 9 MOHM;

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IRF7809AVTRPBF
Discrete Semiconductor Products

IRF7809AVTRPBF

Obsolete
INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 9 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF7809AVTRPBF
Current - Continuous Drain (Id) @ 25°C13.3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs62 nC
Input Capacitance (Ciss) (Max) @ Vds3780 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case0.154 in
Package / Case8-SOIC
Package / Case3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.81

Description

General part information

IRF7809 Series

The IR MOSFET family ofpower MOSFETsutilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters,SMPS,lighting, load switches as well as battery powered applications.

Documents

Technical documentation and resources