Discrete Semiconductor Products

BAT15099E6327HTSA1

Active

INFINEON

SILICON CARBIDE SCHOTTKY DIODE, DUAL ISOLATED, SOT-143 ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

BAT15099E6327HTSA1

Active

INFINEON

SILICON CARBIDE SCHOTTKY DIODE, DUAL ISOLATED, SOT-143 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BAT15099E6327HTSA1

Current - Max [Max]	110 mA
Diode Type	Schottky - 2 Independent
Operating Temperature	150 °C
Package / Case	TO-253AA, TO-253-4
Power Dissipation (Max) [Max]	100 mW
Supplier Device Package	PG-SOT-143-3D
Voltage - Peak Reverse (Max) [Max]	4 V

BAT15099 Series

Part	Voltage - Peak Reverse (Max) [Max]	Operating Temperature	Current - Max [Max]	Supplier Device Package	Package / Case	Diode Type	Power Dissipation (Max) [Max]	Capacitance @ Vr, F
INFINEON BAT15099E6433HTMA1	4 V	150 °C	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA	Schottky - 2 Independent	100 mW
INFINEON BAT15099RE6327HTSA1	4 V	150 °C	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA	Schottky - Cross Over	100 mW	0.5 pF
INFINEON BAT15099E6327HTSA1	4 V	150 °C	110 mA	PG-SOT-143-3D	TO-253-4 TO-253AA	Schottky - 2 Independent	100 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	Digi-Reel®	1	$ 0.60
		10	$ 0.52
		100	$ 0.36
		500	$ 0.30
		1000	$ 0.26
	N/A	3351	$ 1.00
	Tape & Reel (TR)	3000	$ 0.20
Newark	Each (Supplied on Cut Tape)	1	$ 1.01
		10	$ 0.70
		25	$ 0.70
		50	$ 0.60
		100	$ 0.51
		250	$ 0.47
		500	$ 0.43
		1000	$ 0.39

Description

General part information

BAT15099 Series

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet