Discrete Semiconductor Products

IPA60R400CEXKSA1

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POWER MOSFET, N CHANNEL, 600 V, 14.7 A, 0.34 OHM, TO-220FP, THROUGH HOLE

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Discrete Semiconductor Products

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POWER MOSFET, N CHANNEL, 600 V, 14.7 A, 0.34 OHM, TO-220FP, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	IPA60R400CEXKSA1

Current - Continuous Drain (Id) @ 25°C	10.3 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Package / Case	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPA60R400CEXKSA1	20 V	-40 °C	150 °C	31 W	32 nC	10.3 A	600 V	400 mOhm	10 V	MOSFET (Metal Oxide)	3.5 V	N-Channel	Through Hole	TO-220-3 Full Pack	PG-TO220-FP	700 pF

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General part information

N-Channel 600 V 10.3A (Tc) 31W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources

No documents available