Discrete Semiconductor Products

IRF6724MTRPBF

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MOSFET N-CH 30V 27A/150A DIRECT

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Discrete Semiconductor Products

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MOSFET N-CH 30V 27A/150A DIRECT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6724MTRPBF

Current - Continuous Drain (Id) @ 25°C	27 A, 150 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4404 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	2.5 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)
INFINEON IRF6724MTRPBF	Surface Mount	4404 pF	20 V	MOSFET (Metal Oxide)	27 A 150 A	N-Channel	2.35 V	30 V	DirectFET™ Isometric MX	2.8 W 89 W	DIRECTFET™ MX	2.5 mOhm	54 nC	-40 °C	150 °C	4.5 V 10 V
INFINEON IRF6724MTRPBF	Surface Mount	4404 pF	20 V	MOSFET (Metal Oxide)	27 A 150 A	N-Channel	2.35 V	30 V	DirectFET™ Isometric MX	2.8 W 89 W	DIRECTFET™ MX	2.5 mOhm	54 nC	-40 °C	150 °C	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 27A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX

Technical documentation and resources