Discrete Semiconductor Products

VS-EPU6006L-M3

Obsolete

DIODE GP 600V 30A TO247AC

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Discrete Semiconductor Products

Obsolete

DIODE GP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-EPU6006L-M3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	45 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division VS-EPU6006L-M3	30 A	TO-247AC Modified	30 µA	2 V	175 ░C	-65 C	Standard	TO-247-2	200 mA 500 ns	600 V	Through Hole	45 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 30A Through Hole TO-247AC Modified

Technical documentation and resources

No documents available