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RN1102 - Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-416(SSM)
Circuit Protection

DF3D6.8MS,LF

Active
Toshiba Semiconductor and Storage

TVS DIODES (ESD PROTECTION DIODES), UNIDIRECTIONAL TVS DIODE (ESD PROTECTION DIODE), 5.0 V, SOT-416(SSM)

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RN1102 - Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 10 kΩ/10 kΩ, SOT-416(SSM)
Circuit Protection

DF3D6.8MS,LF

Active
Toshiba Semiconductor and Storage

TVS DIODES (ESD PROTECTION DIODES), UNIDIRECTIONAL TVS DIODE (ESD PROTECTION DIODE), 5.0 V, SOT-416(SSM)

Technical Specifications

Parameters and characteristics for this part

SpecificationDF3D6.8MS,LF
ApplicationsGeneral Purpose
Capacitance @ Frequency0.5 pF
Mounting TypeSurface Mount
Package / CaseSOT-416, SC-75
Power Line ProtectionTrue
Supplier Device PackageSSM
TypeSteering (Rail to Rail)
Unidirectional Channels2
Voltage - Breakdown (Min) [Min]6 V
Voltage - Clamping (Max) @ Ipp [Max]11 V
Voltage - Reverse Standoff (Typ)5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 25959$ 0.15

Description

General part information

DF3D6.8MS Series

TVS Diodes (ESD Protection Diodes), Unidirectional TVS Diode (ESD Protection Diode), 5.0 V, SOT-416(SSM)