Discrete Semiconductor Products

2N4123 TIN/LEAD

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BIPOLAR TRANSISTORS - BJT 40VCBO 30VCEO 5.0VEBO 200MA 625MW

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Discrete Semiconductor Products

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BIPOLAR TRANSISTORS - BJT 40VCBO 30VCEO 5.0VEBO 200MA 625MW

Technical Specifications

Parameters and characteristics for this part

Specification	2N4123 TIN/LEAD

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	250 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-226AA
Package / Case	TO-92-3, TO-226-3
Power - Max [Max]	1.5 W
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	0.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Package / Case	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]
Central Semiconductor Corp 2N4123 TIN/LEAD	200 mA	1.5 W	150 °C	-65 °C	NPN	50 nA	Through Hole	50	TO-92-3	0.3 V	250 MHz	TO-226AA	TO-226-3 TO-92-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.15
Mouser	N/A	5000	$ 0.15
		10000	$ 0.14

General part information

BIPOLAR TRANSISTORS - BJT 40VCBO 30VCEO 5.0VEBO 200MA 625MW

Technical documentation and resources

No documents available