Specification	SSM3J15FU,LF

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	9.1 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max) [Max]	150 mW
Rds On (Max) @ Id, Vgs	12 Ohm
Supplier Device Package	USM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.7 V

SSM3J15FU Series

Part	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Toshiba Semiconductor and Storage SSM3J15FU,LF	P-Channel	12 Ohm	150 °C	-55 °C	20 V	USM	SC-70 SOT-323	1.7 V	150 mW	MOSFET (Metal Oxide)	Surface Mount	9.1 pF	100 mA	30 V	4 V	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -30 V, -0.1 A, 12 Ω@4V, SOT-323(USM)

Technical documentation and resources