Discrete Semiconductor Products

IRF6722MTRPBF

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MOSFET N-CH 30V 13A/56A DIRECTFT

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Discrete Semiconductor Products

Unknown

MOSFET N-CH 30V 13A/56A DIRECTFT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6722MTRPBF

Current - Continuous Drain (Id) @ 25°C	13 A, 56 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MP
Power Dissipation (Max)	2.3 W, 42 W
Rds On (Max) @ Id, Vgs	7.7 mOhm
Supplier Device Package	DIRECTFET™ MP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Power Dissipation (Max)	Vgs (Max)
INFINEON IRF6722MTRPBF	Surface Mount	1300 pF	N-Channel	2.4 V	4.5 V 10 V	-40 °C	150 °C	13 A 56 A	7.7 mOhm	DirectFET™ Isometric MP	30 V	DIRECTFET™ MP	17 nC	MOSFET (Metal Oxide)	2.3 W 42 W	20 V
INFINEON IRF6722MTRPBF	Surface Mount	1300 pF	N-Channel	2.4 V	4.5 V 10 V	-40 °C	150 °C	13 A 56 A	7.7 mOhm	DirectFET™ Isometric MP	30 V	DIRECTFET™ MP	17 nC	MOSFET (Metal Oxide)	2.3 W 42 W	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 13A (Ta), 56A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MP

Technical documentation and resources