Specification	SSM3K127TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	123 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	123 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

SSM3K127TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 2.0 A, 0.123 Ω@4V, SOT-323F(UFM)

Part	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM3K127TU,LF	Surface Mount	1 V	150 °C	12 V	MOSFET (Metal Oxide)	1.5 nC	30 V	UFM	123 pF	N-Channel	500 mW	1.8 V 4 V	2 A	123 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 30 V, 2.0 A, 0.123 Ω@4V, SOT-323F(UFM)

Technical documentation and resources