HMC327MS8GETR
LTBMMIC POWER AMPLIFIER SMT, 3 - 4 GHZ
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HMC327MS8GETR
LTBMMIC POWER AMPLIFIER SMT, 3 - 4 GHZ
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Technical Specifications
Parameters and characteristics for this part
| Specification | HMC327MS8GETR |
|---|---|
| Current - Supply | 250 mA |
| Frequency [Max] | 4 GHz |
| Frequency [Min] | 3 GHz |
| Gain | 21 dBi |
| Mounting Type | Surface Mount |
| Noise Figure | 5 dB |
| P1dB | 27 dB |
| Package / Case | 3 mm, 0.118 in |
| Package / Case | Exposed Pad, 8-MSOP, 8-TSSOP |
| RF Type | WLAN, WLL |
| Supplier Device Package | 8-MSOP-EP |
| Test Frequency | 3.5 GHz |
| Part | RF Type | Test Frequency | Noise Figure | P1dB | Frequency [Max] | Frequency [Min] | Gain | Package / Case | Package / Case | Current - Supply | Supplier Device Package | Mounting Type | Contents | Type | Utilized IC / Part |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Analog Devices Inc./Maxim Integrated | WLAN WLL | 3.5 GHz | 5 dB | 27 dB | 4 GHz | 3 GHz | 21 dBi | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | 250 mA | 8-MSOP-EP | Surface Mount | |||
Analog Devices Inc./Maxim Integrated | WLAN WLL | 3.5 GHz | 5 dB | 27 dB | 4 GHz | 3 GHz | 21 dBi | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | 250 mA | 8-MSOP-EP | Surface Mount | |||
 Analog Devices Inc./Maxim Integrated | 4 GHz | 3 GHz | Board(s) | Amplifier | HMC327MS8G | ||||||||||
Analog Devices Inc./Maxim Integrated | WLAN WLL | 3.5 GHz | 5 dB | 27 dB | 4 GHz | 3 GHz | 21 dBi | 0.118 in 3 mm | 8-MSOP 8-TSSOP Exposed Pad | 250 mA | 8-MSOP-EP | Surface Mount |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 20.43 | <1d |
| 10 | $ 17.80 | |||
| 25 | $ 16.89 | |||
| 100 | $ 15.64 | |||
| 250 | $ 14.90 | |||
| Tape & Reel (TR) | 500 | $ 14.37 | <1d | |
Description
General part information
HMC327 Series
The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.ApplicationsWireless Local Loop
Documents
Technical documentation and resources