Specification	MBR3060CT

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	770 mV

MBR3060 Series

Part	Qualification	Package / Case	Current - Average Rectified (Io) (per Diode)	Mounting Type	Grade	Current - Reverse Leakage @ Vr	Technology	Speed	Supplier Device Package	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]
Taiwan Semiconductor Corporation MBR3060PTH	AEC-Q101	TO-247-3	30 A	Through Hole	Automotive	1 mA	Schottky	200 mA 500 ns	TO-247AD (TO-3P)	1 Pair Common Cathode	150 °C	-55 °C	60 V
Taiwan Semiconductor Corporation MBR3060CT		TO-220-3	30 A	Through Hole		200 µA	Schottky	200 mA 500 ns	TO-220AB	1 Pair Common Cathode	150 °C	-55 °C	60 V	770 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 60 V 30A Through Hole TO-220-3

Technical documentation and resources