Discrete Semiconductor Products

GS2GHE3-LTP

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DIODE STANDARD 1000V 2A DO214AC

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Discrete Semiconductor Products

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DIODE STANDARD 1000V 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	GS2GHE3-LTP

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	4 µs
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Package / Case	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Reverse Recovery Time (trr)	Technology	Speed [Min]
MCC (Micro Commercial Components) GS2GHE3-LTP	1000 V	20 pF	-55 °C	150 °C	DO-214AC SMA	DO-214AC (SMA)	1.1 V	5 µA	2 A	Surface Mount	4 µs	Standard	200 mA 500 ns
MCC (Micro Commercial Components) GS2GHE3-LTP	1000 V	20 pF	-55 °C	150 °C	DO-214AC SMA	DO-214AC (SMA)	1.1 V	5 µA	2 A	Surface Mount	4 µs	Standard	200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources