IRFP2907PBF
ActiveIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 4.5 MOHM; WIDE SOA
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IRFP2907PBF
ActiveIR MOSFET™ N-CHANNEL POWER MOSFET ; TO-247 PACKAGE; 4.5 MOHM; WIDE SOA
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP2907PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 209 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 620 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 13000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 470 W |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFP2907 Series
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Documents
Technical documentation and resources