Discrete Semiconductor Products

AIMBG120R120M1XTMA1

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INFINEON

TRANS MOSFET N-CH SIC 1.2KV 22A 8-PIN(7+TAB) TO-263 T/R AUTOMOTIVE AEC-Q101

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DocumentsAIMBG120R120M1XTMA1 | Datasheet

Discrete Semiconductor Products

AIMBG120R120M1XTMA1

Active

INFINEON

TRANS MOSFET N-CH SIC 1.2KV 22A 8-PIN(7+TAB) TO-263 T/R AUTOMOTIVE AEC-Q101

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DocumentsAIMBG120R120M1XTMA1 | Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AIMBG120R120M1XTMA1

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On) [Max]	18 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	458 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	130 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	PG-TO263-7
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	5.1 V

AIMBG120 Series

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	FET Type	Qualification	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Grade	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
INFINEON AIMBG120R120M1XTMA1	22 A	25 V	-10 V	175 °C	-55 °C	458 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV	130 W	5.1 V	18 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7	Surface Mount	150 mOhm
INFINEON AIMBG120R010M1XTMA1	187 A 205 A	25 V	-10 V	175 °C 175 °C	-55 C -55 °C	5703 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV	882 W	5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7 PG-TO263-7-12	Surface Mount	11.3 mOhm	178 nC
INFINEON AIMBG120R060M1XTMA1	38 A	23 V	-5 V	175 °C	-55 °C	880 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV	202 W	5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7-12	Surface Mount	75 mOhm	32 nC	SiC (Silicon Carbide Junction Transistor)
INFINEON AIMBG120R160M1XTMA1	17 A	23 V	-5 V	175 °C	-55 °C		20 V	18 V	N-Channel	AEC-Q101	1.2 kV	106 W	5.1 V	14 nC	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7-12	Surface Mount	200 mOhm		SiC (Silicon Carbide Junction Transistor)	350 pF
INFINEON AIMBG120R040M1XTMA1	48 A 54 A	25 V	-10 V	175 °C 175 °C	-55 C -55 °C		20 V	18 V	N-Channel	AEC-Q101	1.2 kV	268 W	5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7 PG-TO263-7-12	Surface Mount	50 mOhm	43 nC		1264 pF
INFINEON AIMBG120R020M1XTMA1	104 A	23 V	-5 V	175 °C	-55 °C	2667 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV		5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7-12	Surface Mount	25 mOhm	82 nC	SiC (Silicon Carbide Junction Transistor)		468 W
INFINEON AIMBG120R080M1XTMA1	30 A 30.6 A	25 V	-10 V	175 °C 175 °C	-55 C -55 °C	671 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV	168 W	5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7 PG-TO263-7-12	Surface Mount	100 mOhm	24 nC
INFINEON AIMBG120R030M1XTMA1	70 A	23 V	-5 V	175 °C	-55 °C	1738 pF	20 V	18 V	N-Channel	AEC-Q101	1.2 kV	333 W	5.1 V		D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Automotive	PG-TO263-7-12	Surface Mount	38 mOhm		SiC (Silicon Carbide Junction Transistor)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.39
	Tape & Reel (TR)	1000	$ 5.58

Description

General part information

AIMBG120 Series

With Infineon’s performance optimized chip technology (Gen1p), the SiC Mosfet features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Documents

Technical documentation and resources

AIMBG120R120M1XTMA1 | Datasheet

Datasheet