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BZT52B3V9-G RHG
Discrete Semiconductor Products

BZT52B3V9-G RHG

Active
Taiwan Semiconductor Corporation

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

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BZT52B3V9-G RHG
Discrete Semiconductor Products

BZT52B3V9-G RHG

Active
Taiwan Semiconductor Corporation

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBZT52B3V9-G RHG
Current - Reverse Leakage @ Vr3 µA
Impedance (Max) (Zzt) [Max]90 Ohms
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOD-123
Power - Max [Max]410 mW
Supplier Device PackageSOD-123
Tolerance2 %
Voltage - Forward (Vf) (Max) @ If [Max]0.9 V
Voltage - Zener (Nom) (Vz)3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 6000$ 0.23
MouserN/A 1$ 0.23
10$ 0.14
100$ 0.06
1000$ 0.05
3000$ 0.04
9000$ 0.03
24000$ 0.03
45000$ 0.03
99000$ 0.03

Description

General part information

BZT52B-G Series

ZENER DIODES 410MW, 2%, SMALL SIGNAL ZENER DIODE

Documents

Technical documentation and resources