Discrete Semiconductor Products

HT8KF6HTB1

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150V 7.0A, DUAL NCH+NCH, HSMT8, POWER MOSFET

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Discrete Semiconductor Products

Active

150V 7.0A, DUAL NCH+NCH, HSMT8, POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	HT8KF6HTB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	2.5 A, 7 A
Drain to Source Voltage (Vdss)	150 V
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	315 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power - Max	2 W, 14 W
Rds On (Max) @ Id, Vgs	214 mOhm
Supplier Device Package [custom]	8-HSMT
Supplier Device Package [x]	3.2
Supplier Device Package [y]	3
Technology	MOSFET (Metal Oxide)

150V 7.0A, Dual Nch+Nch, HSMT8, Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Configuration	Supplier Device Package [x]	Supplier Device Package [custom]	Supplier Device Package [y]	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor HT8KF6HTB1	2.5 A 7 A	8-PowerVDFN	MOSFET (Metal Oxide)	315 pF	Surface Mount	214 mOhm	150 V	150 °C	2 N-Channel (Dual)	3.2	8-HSMT	3	2 W 14 W	6.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	3000	$ 2.28

General part information

HT8KF6H is a power MOSFET with low on-resistance and High power small mold package, suitable for Switching and Motor drives applications.

Technical documentation and resources