Specification	TMBT3906,LM

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	320 mW
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

TMBT3906 Series

Bipolar Transistors, PNP Bipolar Transistor, -50 V, -0.2 A, SOT-23(SOT23)

Part	Current - Collector Cutoff (Max) [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Package / Case	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Mounting Type	Frequency - Transition	Power - Max [Max]
Toshiba Semiconductor and Storage TMBT3906,LM	100 nA	PNP	150 mA	SC-59 SOT-23-3 TO-236-3	150 °C	50 V	400 mV	100	SOT-23-3	Surface Mount	250 MHz	320 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	17700	$ 0.16

General part information

Bipolar Transistors, PNP Bipolar Transistor, -50 V, -0.2 A, SOT-23(SOT23)

Technical documentation and resources