Specification	RN1104MFV,L3F

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	SOT-723
Power - Max [Max]	150 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	VESM
Transistor Type	NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN1104 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/47 kΩ, SOT-723(VESM)

Part	Resistor - Base (R1)	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Resistor - Emitter Base (R2)	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition
Toshiba Semiconductor and Storage RN1104MFV,L3F	47 kOhms	100 mA	150 mW	47 kOhms	VESM	500 nA	SOT-723	300 mV	NPN - Pre-Biased	50 V	Surface Mount	80
Toshiba Semiconductor and Storage RN1104,LF(CT	47 kOhms	100 mA	100 mW	47 kOhms	SSM	500 nA	SC-75 SOT-416	300 mV	NPN - Pre-Biased	50 V	Surface Mount	80	250 MHz
Toshiba Semiconductor and Storage RN1104MFV,L3F(CT	47 kOhms	100 mA	150 mW	47 kOhms	VESM	500 nA	SOT-723	300 mV	NPN - Pre-Biased	50 V	Surface Mount	80
Toshiba Semiconductor and Storage RN1104T5LFT	47 kOhms	100 mA	100 mW	47 kOhms	SSM	500 nA	SC-75 SOT-416	300 mV	NPN - Pre-Biased	50 V	Surface Mount	80	250 MHz
Toshiba Semiconductor and Storage RN1104ACT(TPL3)	47 kOhms	80 mA	100 mW	47 kOhms	CST3	500 nA	SC-101 SOT-883	150 mV	NPN - Pre-Biased	50 V	Surface Mount	80

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 47 kΩ/47 kΩ, SOT-723(VESM)

Technical documentation and resources