BUK9M20-40HX

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MOSFET N-CH 40V 25A LFPAK33

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Discrete Semiconductor Products

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MOSFET N-CH 40V 25A LFPAK33

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9M20-40HX

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.6 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	38 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	16 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.2 V

Part	Qualification	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology
Freescale Semiconductor - NXP BUK9M20-40HX	AEC-Q101	Surface Mount	2.2 V	16 V	-10 V	N-Channel	40 V	12.6 nC	Automotive	38 W	20 mOhm	4.5 V 10 V	LFPAK33	25 A	-55 °C	175 ░C	MOSFET (Metal Oxide)

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General part information

N-Channel 40 V 25A (Tc) 38W (Tc) Surface Mount LFPAK33

Technical documentation and resources