Integrated Circuits (ICs)

CY62157ESL-45ZSXI

Active

INFINEON

SRAM CHIP ASYNC SINGLE 2.5V/3.3V/5V 8M-BIT 512K X 16 45NS 44-PIN TSOP-II TRAY

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DocumentsTechnical Data Sheet EN

Integrated Circuits (ICs)

CY62157ESL-45ZSXI

Active

INFINEON

SRAM CHIP ASYNC SINGLE 2.5V/3.3V/5V 8M-BIT 512K X 16 45NS 44-PIN TSOP-II TRAY

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CY62157ESL-45ZSXI

Access Time	45 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512K x 16
Memory Size	1024 KB
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 C
Operating Temperature [Min]	-40 ¯C
Package / Case	44-TSOP (0.400", 10.16mm Width)
Supplier Device Package	44-TSOP II
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	2.2 V
Write Cycle Time - Word, Page [custom]	45 ns
Write Cycle Time - Word, Page [custom]	45 ns

CY62157 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Max]	Voltage - Supply [Min]	Write Cycle Time - Word, Page	Package / Case	Memory Interface	Memory Type	Technology	Supplier Device Package	Memory Format	Memory Organization	Access Time	Memory Size	Mounting Type	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
INFINEON CY62157DV30LL-55ZSXI	85 C	-40 ¯C	3.6 V	2.2 V	55 ns	44-TSOP (0.400" 10.16mm Width)	Parallel	Volatile	SRAM - Asynchronous	44-TSOP II	SRAM	512K x 16	55 ns	1024 KB	Surface Mount
INFINEON CY62157G18-55BVXIT	85 C	-40 ¯C	2.2 V	1.65 V	55 ns	48-VFBGA	Parallel	Volatile	SRAM - Asynchronous	48-VFBGA (6x8)	SRAM	512K x 16	55 ns	1024 KB	Surface Mount
INFINEON CY62157G30-45BVXIT	85 C	-40 ¯C	3.6 V	2.2 V		48-VFBGA	Parallel	Volatile	SRAM - Asynchronous	48-VFBGA (6x8)	SRAM	512K x 16	45 ns	1024 KB	Surface Mount	45 ns	45 ns
INFINEON CY62157G30-45BVXAT	85 C	-40 ¯C	3.6 V	2.2 V		48-VFBGA	Parallel	Volatile	SRAM - Asynchronous	48-VFBGA (6x8)	SRAM	512K x 16	45 ns	1024 KB	Surface Mount	45 ns	45 ns
INFINEON CY62157ELL-55ZSXET	125 °C	-40 °C	5.5 V	4.5 V	55 ns	44-TSOP (0.400" 10.16mm Width)	Parallel	Volatile	SRAM - Asynchronous	44-TSOP II	SRAM	512K x 16	55 ns	1024 KB	Surface Mount
INFINEON CY62157DV30L-55BVXET	125 °C	-40 °C	3.6 V	2.2 V	55 ns	48-VFBGA	Parallel	Volatile	SRAM - Asynchronous	48-VFBGA (6x8)	SRAM	512K x 16	55 ns	1024 KB	Surface Mount
INFINEON CY62157CV33LL-70BAI	85 C	-40 ¯C	3.6 V	3 V	70 ns	48-TFBGA	Parallel	Volatile	SRAM - Asynchronous	48-FBGA (6x10)	SRAM	512K x 16	70 ns	1024 KB	Surface Mount
INFINEON CY62157ESL-45ZSXI	85 C	-40 ¯C	5.5 V	2.2 V		44-TSOP (0.400" 10.16mm Width)	Parallel	Volatile	SRAM - Asynchronous	44-TSOP II	SRAM	512K x 16	45 ns	1024 KB	Surface Mount	45 ns	45 ns
INFINEON CY62157EV30LL-45ZSXAT	85 C	-40 ¯C	3.6 V	2.2 V		44-TSOP (0.400" 10.16mm Width)	Parallel	Volatile	SRAM - Asynchronous	44-TSOP II	SRAM	512K x 16	45 ns	1024 KB	Surface Mount	45 ns	45 ns
INFINEON CY62157G18-55BVXAT	85 C	-40 ¯C	2.2 V	1.65 V	55 ns	48-VFBGA	Parallel	Volatile	SRAM - Asynchronous	48-VFBGA (6x8)	SRAM	512K x 16	55 ns	1024 KB	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 11.50
		5	$ 9.84
		10	$ 9.61
		50	$ 9.59
		100	$ 9.57
Digikey	N/A	270	$ 8.50
	Tray	1	$ 14.52
		10	$ 12.89
		25	$ 12.30
		40	$ 12.00
		80	$ 11.58
		230	$ 10.96
		440	$ 10.59
		945	$ 10.18
Newark	Each	1	$ 11.34
		10	$ 10.83
		25	$ 10.48
		50	$ 9.94
		100	$ 9.58
		250	$ 9.19
		500	$ 9.03

Description

General part information

CY62157 Series

CY62157ESL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active-low CE HIGH or both active-low BHE and active-low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active-low CE HIGH), the outputs are disabled (active-low OE HIGH), both the byte high enable and the byte low enable are disabled (active-low BHE, active-low BLE HIGH), or during an active write operation (active-low CE LOW and active-low WE LOW). This device is suitable for interfacing with processors that have TTL I/P levels.

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet