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PG-TO247-3
Discrete Semiconductor Products

IPW65R045C7FKSA1

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INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 45 MOHM; HIGHEST PERFORMANCE

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PG-TO247-3
Discrete Semiconductor Products

IPW65R045C7FKSA1

Active
INFINEON

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 45 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPW65R045C7FKSA1
Current - Continuous Drain (Id) @ 25°C46 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs93 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]4340 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)227 W
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackagePG-TO247-3-1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2122$ 7.38
Tube 1$ 12.15
10$ 8.47
100$ 6.38
500$ 6.12
NewarkEach 1$ 15.13
10$ 13.53
25$ 11.91
50$ 10.31
100$ 9.78
480$ 9.26

Description

General part information

IPW65R045 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

Technical documentation and resources