Discrete Semiconductor Products

FF11MR12W1M1PB11BPSA1

Obsolete

SIC 2N-CH 1200V AG-EASY1B-2

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

SIC 2N-CH 1200V AG-EASY1B-2

Technical Specifications

Parameters and characteristics for this part

Specification	FF11MR12W1M1PB11BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds [Max]	7360 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs [Max]	11.3 mOhm
Supplier Device Package	AG-EASY1B-2
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type
INFINEON FF11MR12W2M1HPB11BPSA1	1.2 kV	1200 V
INFINEON FF11MR12W1M1PB11BPSA1	1.2 kV	1200 V	Module	-40 °C	150 °C	2 N-Channel (Dual)	7360 pF	Silicon Carbide (SiC)	5.55 V	AG-EASY1B-2	11.3 mOhm	100 A	Chassis Mount
INFINEON FF11MR12W1M1B70BPSA1	1.2 kV	1200 V	Module	-40 °C	150 °C	2 N-Channel	7360 pF	Silicon Carbide (SiC)	5.55 V	AG-EASY1B	11.3 mOhm	100 A	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2

Technical documentation and resources

No documents available