Discrete Semiconductor Products

IRLIZ34NPBF

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 35 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

IRLIZ34NPBF

Obsolete

INFINEON

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 35 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRLIZ34NPBF

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	37 W
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	TO-220AB Full-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

IRLIZ34 Series

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Technology	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
INFINEON IRLIZ34NPBF	55 V	37 W	22 A	880 pF	2 V	4 V	10 V	Through Hole	TO-220-3 Full Pack	175 °C	-55 °C	16 V	MOSFET (Metal Oxide)	TO-220AB Full-Pak	N-Channel	25 nC	35 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.47

Description

General part information

IRLIZ34 Series

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources