TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

IPB027N10N5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 2.7 MOHM;

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Discrete Semiconductor Products

IPB027N10N5ATMA1

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INFINEON

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; D2PAK TO-263 PACKAGE; 2.7 MOHM;

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB027N10N5ATMA1

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	139 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	10300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	250 W
Rds On (Max) @ Id, Vgs	2.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.8 V

IPB027 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id
INFINEON IPB027N10N3GATMA1	155 °C 175 °C	-55 °C	6 V 10 V	Surface Mount	20 V	300 W	2.7 mOhm	MOSFET (Metal Oxide)	N-Channel	100 V	206 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 A	14800 pF	3.5 V
INFINEON IPB027N10N5ATMA1	175 °C	-55 °C	6 V 10 V	Surface Mount	20 V	250 W	2.7 mOhm	MOSFET (Metal Oxide)	N-Channel	100 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	120 A			10300 pF	139 nC	3.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 5.72
		10	$ 3.83
		100	$ 2.75
		500	$ 2.29
	Digi-Reel®	1	$ 5.72
		10	$ 3.83
		100	$ 2.75
		500	$ 2.29
	N/A	1020	$ 3.75
	Tape & Reel (TR)	1000	$ 2.26
Newark	Each (Supplied on Full Reel)	1000	$ 2.05

Description

General part information

IPB027 Series

OptiMOS™ 5 100Vpower MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification intelecomblocks including Or-ing, hotswap and battery protection as well as forserver power supplyapplications. The device has a lower RDS(on)of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Documents

Technical documentation and resources