Specification	BSP129H6327XTSA1

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	240 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	0 V
FET Type	N-Channel, Depletion Mode
Gate Charge (Qg) (Max) @ Vgs	5.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	108 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	1.8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6 Ohm
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

BSP129 Series

Part	Supplier Device Package	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Qualification	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Grade	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Technology	FET Type
INFINEON BSP129H6327XTSA1	PG-SOT223-4	20 V	150 °C	-55 °C	108 pF	350 mA	6 Ohm	0 V	10 V	AEC-Q101	240 V	1.8 W	Automotive	1 V	5.7 nC	TO-261-4 TO-261AA	Surface Mount	MOSFET (Metal Oxide)	N-Channel Depletion Mode

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, N-CH, 240V, 0.35A, SOT-223 ROHS COMPLIANT: YES

Technical documentation and resources