Discrete Semiconductor Products

GBPC608-E4/51

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BRIDGE RECT 1PHASE 800V 3A GBPC6

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Discrete Semiconductor Products

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BRIDGE RECT 1PHASE 800V 3A GBPC6

Technical Specifications

Parameters and characteristics for this part

Specification	GBPC608-E4/51

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-Square, GBPC-6
Supplier Device Package	GBPC6
Technology	Standard
Voltage - Forward (Vf) (Max) @ If [Max]	1 V
Voltage - Peak Reverse (Max)	800 V

Part	Package / Case	Technology	Mounting Type	Supplier Device Package	Voltage - Peak Reverse (Max)	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Type	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division GBPC608-E4/51	4-Square GBPC-6	Standard	Through Hole	GBPC6	800 V	5 µA	3 A	1 V	Single Phase	150 °C	-55 °C

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General part information

Bridge Rectifier Single Phase Standard 800 V Through Hole GBPC6

Technical documentation and resources